Fringe field effect8/31/2023 ![]() Non-planar structure of Fin-FET parasitic capacitances like gate oxide overlap and fringe capacitance makes adverse effect like lower switching speed of device, making result on delay ion and ioff of device. Fin-FET is non planar novel device to solve the short channel effects which occurs due to scaling. MOS-FET plays very energetic role but scaling of device affected on performance parameters like speed and power. In this paper we mention Fin-FET assembly for high frequency applications. Because of high-technology progression, the gate construction of MOSFET has been upgraded from planar to nonplanar with an enrichment in the number of monitoring gates multiple gates on 3 sides. ![]() Baburao Ganpatrao Thakare College of Engineering, Nashik 422013, Indiaĭepartment of Electronics and Telecommunication, MET Institute of Engineering, Bhujbal Knowledge City, Nashik 422207, IndiaĬMOS technology, Fin-FET, Parasitic, Thickness, Geometry, Dielectric Abstractįin-FET are insusceptible to short channel effects punch through, threshold voltage, leakage current but their concerts at high frequencies are conceded due to durable fringing field between gate and source with drain area. Department of Electronics and Telecommunication, Maratha Vidya Prasarak Samaj's Karmaveer Adv.
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